Recently, a research team in China has made a significant breakthrough in the field of perovskite light-emitting diodes (LEDs). By accelerating the radiative recombination rate and significantly improving the fluorescence quantum efficiency, the external quantum efficiency of perovskite LEDs has surpassed the 30% mark, approaching industrialization levels. The research findings were published in the international academic journal Nature.
In recent years, an innovation team led by Professor Huang Wei, Chief Scientist of the Flexible Electronics Research Institute and the National Basic (Frontier) Science Center for Flexible Electronics at Northwestern Polytechnical University, and Professor Wang Jianpu, formerly from Nanjing Tech University’s School of Flexible Electronics (Future Technology) and currently serving as Vice President of Changzhou University, has achieved a series of innovative results in the research of perovskite LEDs.
Perovskite luminescent materials are classified into three-dimensional and low-dimensional categories. Among them, three-dimensional perovskites show the most potential for achieving efficient luminescence under high brightness and hold significant industrialization prospects for future display technologies. However, the external quantum efficiency of three-dimensional perovskite LEDs generally remains around 20%, encountering a bottleneck in overall performance improvement.
To address this global challenge of enhancing the fluorescence quantum efficiency of three-dimensional perovskite materials, the team has pioneered a novel approach. They creatively proposed a method to control crystal growth, thereby generating perovskite crystal phases with faster radiative recombination rates, leading to a significant improvement in fluorescence quantum efficiency through this new process.
Using this innovative method, the team successfully maintained the submicron structure of three-dimensional perovskites, ensuring that the light extraction efficiency of the devices is not compromised, achieving a dual effect. As a result, they achieved a fluorescence quantum efficiency of 96% and a light extraction efficiency of 32%, and further prepared highly efficient perovskite LEDs with an external quantum efficiency exceeding 30%,” explained Professor Wang Jianpu.
Speaking about the development of perovskite LEDs, Academician Huang Wei stated, “This significant breakthrough further demonstrates the tremendous potential of thin-film LED technology based on perovskite semiconductor materials and will undoubtedly promote the industrialization of display technologies based on perovskite LEDs. At the same time, it heralds its broad application prospects in the field of high-efficiency green lighting.”
This achievement holds important significance for improving the luminous efficiency and performance of LEDs.
1，Enhancement of industrialization: The breakthrough in external quantum efficiency represents an important step forward for the industrialization of perovskite LEDs. Efficient and stable perovskite LEDs are expected to be widely used in lighting, display, and other fields in the future, driving the rapid development of related industries.
2，Strengthening competitive advantage: Breakthroughs in perovskite LED research in China will enhance the country’s advantage in global LED technology competition. As the world’s largest producer and exporter of LED lighting products, China’s breakthroughs in this field will help consolidate and expand market share.
3，Optimization of the industry chain: The breakthrough in perovskite LED technology will promote the optimization and upgrading of the LED industry chain. From raw materials, LED substrate production, LED epitaxial growth, LED chip manufacturing to LED packaging and application, all sectors will benefit from this technological breakthrough.
Perovskite is a frontier material with broad application prospects. In addition to its huge potential in the LED field, perovskite semiconductors have potential application value in devices such as solar cells and photodetectors due to their high light absorption coefficient and carrier mobility.
